Is the Ne operation of the helium ion microscope suitable for electron backscatter diffraction sample preparation?

• Annalena Wolff

Beilstein J. Nanotechnol. 2021, 12, 965–983, doi:10.3762/bjnano.12.73

Scanning transmission helium ion microscopy on carbon nanomembranes

• Daniel Emmrich,
• Annalena Wolff,
• Nikolaus Meyerbröker,
• Jörg K. N. Lindner,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 222–231, doi:10.3762/bjnano.12.18

• energy-filtered transmission electron microscopy measurements. Keywords: carbon nanomembranes; dark field; helium ion microscopy (HIM); scanning transmission ion microscopy (STIM); SRIM simulations; Introduction Throughout the past decade, the helium ion microscope (HIM) has emerged as a versatile

• intensity drops when increasing the acceptance angle. This is in agreement with the SRIM simulations. At low and at high acceptance angles, single layer and double layer are hard to distinguish. Maximum contrast, that is, maximum signal difference between the single layer and the double layer, is achieved

• to SRIM simulations as demonstrated in the following. In Figure 3c the existence of a maximum signal difference between a single- and a double-layer membrane was predicted. In this case, the thickness of the membrane was assumed to be 1.5 nm resulting in a maximum at an acceptance angle of 10 mrad

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• Information SRIM simulations of collision and ionization in 5 nm Pt60Pd40/200 nm PMMA samples irradiated with He+, Ne+, and Ga+ FIBs. Supporting Information File 144: SRIM simulations. Funding Partfunding from Interreg Deutschland-Danmark within the European Regional Development Fund (ERDF) via the CELLTOM

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• simulations was set for or a maximum step number of 2 × 105 iterations. Appendix SRIM simulations of the ion energy loss distribution: To determine the distribution of ions and the spatial distribution of the transferred energy in the sample, simulations using the SRIM software framework have been performed

Disorder in H⁺-irradiated HOPG: effect of impinging energy and dose on Raman D-band splitting and surface topography

• Lisandro Venosta,
• Noelia Bajales,
• Sergio Suárez and
• Paula G. Bercoff

Beilstein J. Nanotechnol. 2018, 9, 2708–2717, doi:10.3762/bjnano.9.253

• impinging energy is approximately four times greater than in the case of lower energy. In fact, SRIM simulations allowed us to estimate penetration depths of 3.3 μm and 12.6 μm for low and high energies, respectively. Hence, a smaller mean free path of the ions results in the case of low energy, which

Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

• Baran Eren,
• Dorothée Hug,
• Laurent Marot,
• Rémy Pawlak,
• Marcin Kisiel,
• Roland Steiner,
• Dominik M. Zumbühl and
• Ernst Meyer

Beilstein J. Nanotechnol. 2012, 3, 852–859, doi:10.3762/bjnano.3.96

• deeper into the first 4–5 layers of HOPG, suggested by the SRIM simulations [11]. The question is: Will graphane form after the plasma exposure and if it does, is it possible to distinguish its existence from other possible surface rearrangements caused by the exposure? Before starting, it should be

Preparation and characterization of supported magnetic nanoparticles prepared by reverse micelles

• Ulf Wiedwald,
• Luyang Han,
• Johannes Biskupek,
• Ute Kaiser and
• Paul Ziemann

Beilstein J. Nanotechnol. 2010, 1, 24–47, doi:10.3762/bjnano.1.5